发明授权
US07590159B2 Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
有权
表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管
- 专利标题： Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
- 专利标题（中）： 表面发射激光二极管可在1.1-1.7微米的波长范围内工作，光通信系统采用这种激光二极管
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申请号： US11759615申请日： 2007-06-07
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公开(公告)号： US07590159B2公开(公告)日： 2009-09-15
- 发明人: Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
- 申请人： Naoto Jikutani , Shunichi Sato , Takashi Takahashi , Akihiro Itoh , Takuro Sekiya , Akira Sakurai , Masayoshi Katoh , Teruyuki Furuta , Kazuya Miyagaki , Ken Kanai , Atsuyuki Watada , Koei Suzuki , Satoru Sugawara , Shinji Satoh , Shuuichi Hikichi
- 申请人地址： JP Tokyo
- 专利权人： Ricoh Company, Ltd.
- 当前专利权人： Ricoh Company, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2001-050083 20010226; JP2001-050145 20010226; JP2001-050171 20010226; JP2001-051253 20010226; JP2001-051256 20010226; JP2001-051266 20010226; JP2001-053190 20010227; JP2001-053200 20010227; JP2001-053213 20010227; JP2001-053218 20010227; JP2001-053225 20010227; JP2001-073767 20010315; JP2001-090711 20010327; JP2002-019748 20020129; JP2002-033590 20020212; JP2002-050548 20020226; JP2002-130330 20020502; JP2003-118115 20030423
- 主分类号： H01S5/00
- IPC分类号： H01S5/00
摘要：
A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5-50 nm.
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