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US07592230B2 Trench power device and method 有权
沟槽动力装置及方法

Trench power device and method
摘要：
Means and methods are provided for trench TMOS devices (41-10, 11, 12), comprising, providing a first semiconductor (53, 53′) of a first composition having an upper surface (541), with a body portion (54) proximate the upper surface (541), a drift portion (46, 83) spaced apart from the upper surface (541) and a trench (49, 49′) having sidewalls (493) extending from the upper surface (541) into the drift portion (46, 83). A second semiconductor (56) adapted to provide a higher mobility layer is applied on the trench sidewalls (493) where parts (78) of the body portion (54) are exposed. A dielectric (70) covers the higher mobility layer (56) and separates it from a control gate (72) in the trench (49, 49′). Source regions (68) formed in the body portion (54) proximate the upper surface (491) communicate with the higher mobility layer (56). When biased, source-drain current (87, 87′) flows from the source regions (68) through gate induced channels (78) in the higher mobility layer (56) and into the drift portion (46, 83) where it is extracted by a drain (42) or other connection coupled to the drift portion (46, 83).
摘要（中）：

提供了用于沟槽TMOS器件（41-10,11,12）的方法和方法，包括：提供具有上表面（541）的第一组合物的第一半导体（53,53'）与主体部分（54） 邻近上表面（541），与上表面（541）间隔开的漂移部分（46,83）和具有从上表面（541）延伸到漂移体（491）中的侧壁（493）的沟槽 部分（46,83）。 适于提供更高迁移率层的第二半导体（56）被施加在主体部分（54）的部分（78）暴露的沟槽侧壁（493）上。 电介质（70）覆盖高迁移率层（56）并将其与沟槽（49,49'）中的控制栅极（72）分离。 形成在靠近上表面（491）的主体部分（54）中的源区（68）与较高迁移率层（56）连通。 当偏置时，源极 - 漏极电流（87,87'）从源极区（68）流过高迁移率层（56）中的栅极感应通道（78）并流入其中被提取的漂移部分（46,83） 通过连接到漂移部分（46,83）的排水（42）或其它连接。

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