发明授权
US07592538B2 Method of fabricating a multijunction solar cell with a bypass diode having an intrinsic layer
有权
制造具有本征层的旁路二极管的多结太阳能电池的方法
- 专利标题： Method of fabricating a multijunction solar cell with a bypass diode having an intrinsic layer
- 专利标题（中）： 制造具有本征层的旁路二极管的多结太阳能电池的方法
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申请号： US11058595申请日： 2005-05-06
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公开(公告)号： US07592538B2公开(公告)日： 2009-09-22
- 发明人: Paul R. Sharps , Daniel J. Aiken , Doug Collins , Mark A. Stan
- 申请人： Paul R. Sharps , Daniel J. Aiken , Doug Collins , Mark A. Stan
- 申请人地址： US NM Albuquerque
- 专利权人： Emcore Solar Power, Inc.
- 当前专利权人： Emcore Solar Power, Inc.
- 当前专利权人地址： US NM Albuquerque
- 主分类号： H01L31/00
- IPC分类号： H01L31/00
摘要：
A method of making a multijunction solar cell, including first and second solar cells on a substrate with a bypass diode having an intrinsic layer and operative for passing current when the multijunction solar cell is shaded. In one embodiment, a vertical sequence of solar cells are epitaxially grown on a first portion of the substrate, and the layers of the diode are epitaxially grown on a second portion of the substrate with the layers of the bypass diode being deposited subsequent to the layers of the top solar cell.
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