发明授权
- 专利标题： Non-volatile memory cell with a hybrid access transistor
- 专利标题（中）： 具有混合存取晶体管的非易失性存储单元
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申请号： US11740939申请日： 2007-04-27
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公开(公告)号： US07595237B2公开(公告)日： 2009-09-29
- 发明人: Xiaoyu Chen , Donghua Liu , Sung Mun Jung , Swee Tuck Woo , Rachel Low , Louis Lim , Siow Lee Chwa
- 申请人： Xiaoyu Chen , Donghua Liu , Sung Mun Jung , Swee Tuck Woo , Rachel Low , Louis Lim , Siow Lee Chwa
- 申请人地址： SG Singapore
- 专利权人： Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人： Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Horizon IP Pte Ltd
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The access transistor is a hybrid transistor which includes a gate with a thick gate dielectric layer formed on the thin gate well.
公开/授权文献
- US20080266944A1 NON-VOLATILE MEMORY CELL WITH A HYBRID ACCESS TRANSISTOR 公开/授权日：2008-10-30
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