发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US12030126申请日: 2008-02-12
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公开(公告)号: US07596010B2公开(公告)日: 2009-09-29
- 发明人: Masahiko Nishiyama , Keiichi Higeta , Takashi Koba
- 申请人: Masahiko Nishiyama , Keiichi Higeta , Takashi Koba
- 申请人地址: JP Tokyo JP Kodaira-shi
- 专利权人: Hitachi, Ltd.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人: Hitachi, Ltd.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人地址: JP Tokyo JP Kodaira-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2004-005308 20040113; JP2004-265297 20040913
- 主分类号: G11C15/00
- IPC分类号: G11C15/00
摘要:
There is provided a control circuit (409) for fetching a result of a comparison of a part of bits of entry data with a corresponding bit of comparison data and prohibiting a comparison of residual bits in the entry data with the corresponding bit of the comparison data when the result of the comparison is mismatched, and the comparison of the residual bits in the entry data with the corresponding bit of the comparison data is prohibited. Consequently, the number of signal lines to be activated in one cycle of a comparing operation is decreased. Thus, a reduction in a consumed power can be achieved.
公开/授权文献
- US20080144345A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2008-06-19
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