发明授权
- 专利标题: High resolution printing technique
- 专利标题(中): 高分辨率打印技术
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申请号: US11252465申请日: 2005-10-17
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公开(公告)号: US07598021B2公开(公告)日: 2009-10-06
- 发明人: Gurtej S. Sandhu
- 申请人: Gurtej S. Sandhu
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A pattern having exceptionally small features is printed on a partially fabricated integrated circuit during integrated circuit fabrication. The pattern is printed using an array of probes, each probe having: 1) a photocatalytic nanodot at its tip; and 2) an individually controlled light source. The surface of the partially fabricated integrated circuit comprises a photochemically active species. The active species undergoes a chemical change when contacted by the nanodot, when the nanodot is illuminated by light. To print a pattern, each probe raster-scans its associated nanodot across the surface of the partially fabricated integrated circuit. When the nanodot reaches a desired location, the nanodot is illuminated by the light source, catalyzing a change in the reactive species and, thus, printing at that location. Subsequently, reacted or unreacted species are selectively removed, thereby forming a mask pattern over the partially fabricated integrated circuit. The minimum size of the features in the pattern is determined by the size of the nanodot and can be very small, e.g., having critical dimensions of about 20 nm or less.
公开/授权文献
- US20070087290A1 High resolution printing technique 公开/授权日:2007-04-19
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