发明授权
- 专利标题: Apparatus and method for confined area planarization
- 专利标题(中): 限制区域平面化的装置和方法
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申请号: US12129612申请日: 2008-05-29
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公开(公告)号: US07598175B2公开(公告)日: 2009-10-06
- 发明人: John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
- 申请人: John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Martine Penilla & Gencarella, LLP
- 主分类号: H01L21/302
- IPC分类号: H01L21/302
摘要:
A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
公开/授权文献
- US20080227369A1 Apparatus and Method for Confined Area Planarization 公开/授权日:2008-09-18