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US07598180B2 Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby 失效
用于去除由半导体晶片的边缘芯片产生的缺陷的半导体工艺和由此制造的半导体器件

Semiconductor process for removing defects due to edge chips of a semiconductor wafer and semiconductor device fabricated thereby
摘要：
A method for removing defects due to edge chips of a semiconductor wafer is disclosed. This method includes forming a molding layer over a semiconductor wafer. The molding layer is patterned to form a plurality of storage node holes, where the plurality of storage node holes include at least one first storage node hole formed on an effective chip area and at least one second storage node hole formed on an edge chip area. First storage nodes and second storage nodes are formed in the first and second storage node holes, respectively. A photoresist pattern is formed on the wafer having the storage nodes. The photoresist pattern is preferably formed to expose the effective chip areas and to cover the edge chip areas. The molding layer is etched, using the photoresist pattern as an etching mask, to expose portions of the first storage nodes.
摘要（中）：

公开了一种用于消除由半导体晶片的边缘芯片引起的缺陷的方法。 该方法包括在半导体晶片上形成模塑层。 模塑层被图案化以形成多个存储节点孔，其中多个存储节点孔包括形成在有效芯片区域上的至少一个第一存储节点孔和形成在边缘芯片区域上的至少一个第二存储节点孔。 第一存储节点和第二存储节点分别形成在第一和第二存储节点孔中。 在具有存储节点的晶片上形成光致抗蚀剂图案。 光致抗蚀剂图案优选地形成为暴露有效芯片区域并覆盖边缘芯片区域。 使用光致抗蚀剂图案作为蚀刻掩模蚀刻成型层，以露出第一存储节点的部分。

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