发明授权
- 专利标题： Superjunction trench device and method
- 专利标题（中）： 超结沟设备及方法
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申请号： US11510547申请日： 2006-08-25
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公开(公告)号： US07598517B2公开(公告)日： 2009-10-06
- 发明人: Edouard D. de Frésart , Robert W. Baird
- 申请人： Edouard D. de Frésart , Robert W. Baird
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Ingrassia, Fisher & Lorenz, P.C.
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
Semiconductor structures and methods are provided for a semiconductor device (40) employing a superjunction structure (41) and overlying trench (91) with embedded control gate (48). The method comprises, forming (52-6, 52-9) interleaved first (70-1, 70-2, 70-3, 70-4, etc.) and second (74-1, 74-2, 74-3, etc.) spaced-apart regions of first (70) and second (74) semiconductor materials of different conductivity type and different mobilities so that, in a first embodiment, the second semiconductor material (74) has a higher mobility for the same carrier type than the first semiconductor material (70), and providing (52-14) an overlying third semiconductor material (82) in which a trench (90, 91) is formed with sidewalls (913) having thereon a fourth semiconductor material (87) that has a higher mobility than the third material (82), adapted to carry current (50) between source regions (86), through the fourth (87) semiconductor material in the trench (91) and the second semiconductor material (74) in the device drift space (42) to the drain (56). In a further embodiment, the first (70) and third (82) semiconductor materials are relaxed materials and the second (74) and fourth (87) semiconductor materials are strained semiconductor materials.
公开/授权文献
- US20080050877A1 Superjunction trench device and method 公开/授权日：2008-02-28
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