发明授权
- 专利标题: Microelectronic contact structure and method of making same
- 专利标题(中): 微电子触点结构及其制作方法
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申请号: US11456568申请日: 2006-07-11
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公开(公告)号: US07601039B2公开(公告)日: 2009-10-13
- 发明人: Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu
- 申请人: Benjamin N. Eldridge , Gary W. Grube , Igor Y. Khandros , Gaetan L. Mathieu
- 申请人地址: US CA Livermore
- 专利权人: FormFactor, Inc.
- 当前专利权人: FormFactor, Inc.
- 当前专利权人地址: US CA Livermore
- 代理商 N. Kenneth Burraston
- 主分类号: H05K3/00
- IPC分类号: H05K3/00
摘要:
An electronic interconnection apparatus can include a sacrificial substrate, which can include first trenches and second trenches formed in the sacrificial substrate. The first trenches can be disposed below a surface of the sacrificial substrate, and the second trenches can be disposed below the first trenches. First sidewalls can connect the surface and the first trenches, and the first sidewalls can be angled with respect to the surface and the first trenches. Second sidewalls can connect the first trenches and the second trenches, and the second sidewalls can be angled with respect to the first trenches and the second trenches. Spring contact elements can reside upon the sacrificial substrate. Each of the spring contact elements can have a first portion disposed on the surface, a second portion disposed on one of the first trenches, and a third portion disposed on one of the second trenches.
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