Semiconductive device fabricated using subliming materials to form interlevel dielectrics

Invention Grant

US07601629B2 Semiconductive device fabricated using subliming materials to form interlevel dielectrics 有权

Title translation: 使用升华材料制造的半导体器件形成层间电介质

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Patent Title: Semiconductive device fabricated using subliming materials to form interlevel dielectrics
Patent Title (中): 使用升华材料制造的半导体器件形成层间电介质
Application No.: US11312926

Application Date: 2005-12-20
Publication No.: US07601629B2

Publication Date: 2009-10-13
Inventor: Deepak A. Ramappa , Richard L. Guldi , Asad Haider , Frank Poag
Applicant: Deepak A. Ramappa , Richard L. Guldi , Asad Haider , Frank Poag
Applicant Address: US TX Dallas
Assignee: Texas Instruments Incorporated
Current Assignee: Texas Instruments Incorporated
Current Assignee Address: US TX Dallas
Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductive device fabricated using subliming materials to form interlevel dielectrics

Abstract:

The invention provides a method of fabricating a semiconductive device [200]. In this embodiment, the method comprises depositing a hydrocarbon layer [294] over a semiconductive substrate, forming an interconnect structure [295, 297] within the hydrocarbon layer [294], and removing the hydrocarbon layer [294] by sublimation.

Abstract(Chinese):

本发明提供一种制造半导体器件的方法[200]。在该实施例中，该方法包括在半导体衬底上沉积烃层，在烃层[294]内形成互连结构[295,297]，并通过升华除去烃层[294]。

Public/Granted literature

US20070141829A1 Semiconductive device fabricated using subliming materials to form interlevel dielectrics Public/Granted day:2007-06-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）