发明授权
- 专利标题: Method of processing silicon wafer
- 专利标题(中): 硅晶片处理方法
-
申请号: US10558789申请日: 2004-05-27
-
公开(公告)号: US07601642B2公开(公告)日: 2009-10-13
- 发明人: Sakae Koyata , Kazushige Takaishi
- 申请人: Sakae Koyata , Kazushige Takaishi
- 申请人地址: JP Tokyo
- 专利权人: Sumco Corporation
- 当前专利权人: Sumco Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2003-150261 20030528
- 国际申请: PCT/JP2004/007251 WO 20040527
- 国际公布: WO2004/107424 WO 20041209
- 主分类号: H01L21/461
- IPC分类号: H01L21/461
摘要:
The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafer is subjected to alkaline cleaning to be removed of contaminants resulting from preceding machining; and step 16 in which the wafer is alternately transferred between two groups of etching tanks one of which contain acidic etching solutions and the other alkaline etching solutions, wherein an additional step 12 is introduced between step 11 and step 13 in which a wafer is immersed in an acidic solution containing hydrofluoric acid (HF) and nitric acid (HNO3) at a volume ratio of ⅛ to ½ (HF/HNO3) so that degraded superficial layers occurring on the front and rear surfaces of the wafer as a result of machining can be removed and the edge surface of the wafer can be beveled.The inventive method simplifies the steps involved in the processing of a wafer, and reduces the intervention of alkaline cleaning accompanied with mechanical beveling, thereby reducing the risk of contamination due to metal impurities which may result from alkaline cleaning.
公开/授权文献
- US20060252272A1 Method of processing silicon wafer 公开/授权日:2006-11-09