发明授权
- 专利标题： Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
- 专利标题（中）： 低电阻隧道磁阻传感器，具有复合内固定层
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申请号： US11811930申请日： 2007-05-29
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公开(公告)号： US07602033B2公开(公告)日： 2009-10-13
- 发明人: Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
- 申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L43/00
摘要：
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of