发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11780052申请日: 2007-07-19
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公开(公告)号: US07602595B2公开(公告)日: 2009-10-13
- 发明人: Kazuaki Hiyama
- 申请人: Kazuaki Hiyama
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2007-041212 20070221
- 主分类号: H02H7/00
- IPC分类号: H02H7/00
摘要:
A semiconductor device includes a switching element outputting from a sense terminal a sense current at a fixed rate relative to a main current flowing in the switching element; a sense resistor connected at a first end to the sense terminal and to ground at a second end; a correction current generating circuit that supplies and extracts a correction current to at the first end of the sense resistor; an overcurrent protective circuit that receives a sense voltage generated when the sense current and the correction current flow through the sense resistor, and outputs a stop signal when the sense voltage is larger than a reference voltage; and a driving circuit that stops driving the switching element when the stop signal is received from the overcurrent protective circuit.
公开/授权文献
- US20080198526A1 SEMICONDUCTOR DEVICE 公开/授权日:2008-08-21
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