发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11846830申请日: 2007-08-29
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公开(公告)号: US07605422B2公开(公告)日: 2009-10-20
- 发明人: Masumi Saitoh , Ken Uchida
- 申请人: Masumi Saitoh , Ken Uchida
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-237306 20060901
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
A semiconductor device capable of realizing low-voltage drivability and large storage capacity (miniaturization) by achieving large threshold voltage shifts and long retention time while at the same time suppressing variations in characteristics among memory cells is disclosed. The device includes a semiconductor memory cell having a channel region formed in a semiconductor substrate, a tunnel insulator film on the channel region, a charge storage insulator film on the tunnel insulator film, a control dielectric film on the charge storage film, a control electrode on the control dielectric film, and source/drain regions at opposite ends of the channel region. The memory cell's channel region has a cross-section at right angles to a direction along the channel length, the width W and height H of which are each less than or equal to 10 nm.
公开/授权文献
- US20080054346A1 SEMICONDUCTOR DEVICE 公开/授权日:2008-03-06