发明授权
US07605429B2 Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
有权
用于自适应井偏置和功率和性能增强的混合晶体取向CMOS结构
- 专利标题： Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
- 专利标题（中）： 用于自适应井偏置和功率和性能增强的混合晶体取向CMOS结构
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申请号： US11107611申请日： 2005-04-15
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公开(公告)号： US07605429B2公开(公告)日： 2009-10-20
- 发明人: Kerry Bernstein , Jeffrey W. Sleight , Min Yang
- 申请人： Kerry Bernstein , Jeffrey W. Sleight , Min Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of circuits built from the combination of the SOI and bulk-Si region FETs.