发明授权
- 专利标题： Spin-transfer MRAM structure and methods
- 专利标题（中）： 旋转MRAM结构和方法
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申请号： US11736960申请日： 2007-04-18
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公开(公告)号： US07605437B2公开(公告)日： 2009-10-20
- 发明人: Frederick B. Mancoff , Nicholas D. Rizzo
- 申请人： Frederick B. Mancoff , Nicholas D. Rizzo
- 申请人地址： US AZ Chandler
- 专利权人： Everspin Technologies, Inc.
- 当前专利权人： Everspin Technologies, Inc.
- 当前专利权人地址： US AZ Chandler
- 代理机构： Ingrassia, Fisher & Lorenz, P.C.
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.
公开/授权文献
- US20080258247A1 SPIN-TRANSFER MRAM STRUCTURE AND METHODS 公开/授权日：2008-10-23