发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US12263830申请日: 2008-11-03
-
公开(公告)号: US07605442B2公开(公告)日: 2009-10-20
- 发明人: Osamu Fujii , Tomoya Sanuki
- 申请人: Osamu Fujii , Tomoya Sanuki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2004-316419 20041029
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.
公开/授权文献
- US20090057777A1 SEMICONDUCTOR DEVICE 公开/授权日:2009-03-05
信息查询
IPC分类: