发明授权
US07606982B2 Multi-path accessible semiconductor memory device having data transmission mode between ports
有权
具有在端口之间的数据传输模式的多路径可访问半导体存储器件
- 专利标题: Multi-path accessible semiconductor memory device having data transmission mode between ports
- 专利标题(中): 具有在端口之间的数据传输模式的多路径可访问半导体存储器件
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申请号: US11466406申请日: 2006-08-22
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公开(公告)号: US07606982B2公开(公告)日: 2009-10-20
- 发明人: Hyong-Ryol Hwang , Sang-Kyun Park
- 申请人: Hyong-Ryol Hwang , Sang-Kyun Park
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR10-2005-0127528 20051222
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A semiconductor memory device including a plurality of ports, at least one shared memory region of a memory cell array accessible through the ports, and a data transmission controller coupled to the shared memory region and the ports. The data transmission controller is configured to apply a read command of a read operation to the shared memory region after a write command of a write operation before applying any other commands to the shared memory region when at least a portion of a write address associated with the write operation and at least a portion of a read address associated with the read operation are substantially equivalent.