发明授权
- 专利标题: Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
- 专利标题(中): 体接触半导体结构和制造这种体接触半导体结构的方法
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申请号: US11925352申请日: 2007-10-26
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公开(公告)号: US07608506B2公开(公告)日: 2009-10-27
- 发明人: Kangguo Cheng , Louis Lu-Chen Hsu , Jack Allan Mandelman
- 申请人: Kangguo Cheng , Louis Lu-Chen Hsu , Jack Allan Mandelman
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body contact in the buried dielectric layer of the SOI wafer. The body contact electrically couples a semiconductor body with a channel region of the access device of one vertical memory cell and a semiconductor substrate of the SOI wafer. The body contact provides a current leakage path that reduces the impact of floating body effects upon the vertical memory cell. The body contact may be formed by an ion implantation process that modifies the stoichiometry of a region of the buried dielectric layer so that the modified region becomes electrically conductive with a relatively high resistance.
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