发明授权
US07609002B2 Plasma accelerating apparatus and plasma processing system having the same 失效
等离子体加速装置和等离子体处理系统具有相同的功能

  • 专利标题: Plasma accelerating apparatus and plasma processing system having the same
  • 专利标题(中): 等离子体加速装置和等离子体处理系统具有相同的功能
  • 申请号: US11410933
    申请日: 2006-04-26
  • 公开(公告)号: US07609002B2
    公开(公告)日: 2009-10-27
  • 发明人: Won-tae Lee
  • 申请人: Won-tae Lee
  • 申请人地址: KR Suwon-si
  • 专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人: Samsung Electronics Co., Ltd.
  • 当前专利权人地址: KR Suwon-si
  • 代理机构: Sughrue Mion, PLLC
  • 优先权: KR10-2005-0069279 20050729
  • 主分类号: H01J7/24
  • IPC分类号: H01J7/24
Plasma accelerating apparatus and plasma processing system having the same
摘要:
A plasma accelerating apparatus and a plasma processing system, which efficiently elevate a drift velocity of a plasma beam and are simple to manufacture and simple in construction. A channel includes an outlet port opening at an end of the channel. A gas supply portion supplies a gas in the channel. A plasma generator provides ionization energy to the gas in the channel to generate a plasma beam. A plasma accelerating portion includes a plurality of grids transversely arranged spaced apart from each other by a predetermined distance in the channel for accelerating the plasma beam generated by the plasma generator to the outlet port of the channel with an electric field. The plasma accelerating apparatus and the plasma processing system elevate a drift velocity of the plasma beam more efficiently than conventional accelerating apparatuses that use an electromagnetic force induced by a magnetic field and a secondary current.
信息查询
0/0