发明授权
- 专利标题： Method for fabricating a semiconductor device and semiconductor device
- 专利标题（中）： 半导体器件和半导体器件的制造方法
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申请号： US11710744申请日： 2007-02-26
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公开(公告)号： US07612381B2公开(公告)日： 2009-11-03
- 发明人: Satoshi Kamiyama , Hiroshi Amano , Motoaki Iwaya , Isamu Akasaki , Hideki Kasugai
- 申请人： Satoshi Kamiyama , Hiroshi Amano , Motoaki Iwaya , Isamu Akasaki , Hideki Kasugai
- 申请人地址： JP Nagoya-shi, Aichi-ken
- 专利权人： Meijo University
- 当前专利权人： Meijo University
- 当前专利权人地址： JP Nagoya-shi, Aichi-ken
- 代理机构： Yokoi & Co., U.S.A., Inc.
- 代理商 Peter Ganjian
- 优先权： JP2004-251468 20040831
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.