发明授权
- 专利标题： Semiconductor storage device and method of manufacturing the same
- 专利标题（中）： 半导体存储装置及其制造方法
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申请号： US10931193申请日： 2004-09-01
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公开(公告)号： US07612398B2公开(公告)日： 2009-11-03
- 发明人: Yoshinori Kumura , Yoshiro Shimojo , Iwao Kunishima , Tohru Ozaki
- 申请人： Yoshinori Kumura , Yoshiro Shimojo , Iwao Kunishima , Tohru Ozaki
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-196843 20040702
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A semiconductor storage device wherein a plurality of ferroelectric capacitors are sufficiently covered with a hydrogen barrier film formed thereon comprises a field effect transistor formed on one surface side of a semiconductor substrate, a plurality of ferroelectric capacitors formed close to each other above the field effect transistor, an insulting film configured to cover the plurality of ferroelectric capacitors and planarised a space between adjacent ferroelectric capacitors in a self-aligned manner during formation thereof, and a hydrogen barrier film formed on the insulating film.
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