发明授权
US07615432B2 HDP/PECVD methods of fabricating stress nitride structures for field effect transistors
有权
制造场效应晶体管的应力氮化物结构的HDP / PECVD方法
- 专利标题: HDP/PECVD methods of fabricating stress nitride structures for field effect transistors
- 专利标题(中): 制造场效应晶体管的应力氮化物结构的HDP / PECVD方法
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申请号: US11264865申请日: 2005-11-02
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公开(公告)号: US07615432B2公开(公告)日: 2009-11-10
- 发明人: Junjung Kim , Jae-eun Park , Ja-hum Ku , Daewon Yang
- 申请人: Junjung Kim , Jae-eun Park , Ja-hum Ku , Daewon Yang
- 申请人地址: KR US NY Armonk
- 专利权人: Samsung Electronics Co., Ltd.,International Business Machines Corporation
- 当前专利权人: Samsung Electronics Co., Ltd.,International Business Machines Corporation
- 当前专利权人地址: KR US NY Armonk
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L21/8234 ; H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L21/469
摘要:
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformal and the second stress nitride layer is conformal. Related structures also are described.