发明授权
- 专利标题: Non-volatile memory device and method of manufacturing the same
- 专利标题(中): 非易失性存储器件及其制造方法
-
申请号: US12153071申请日: 2008-05-13
-
公开(公告)号: US07615437B2公开(公告)日: 2009-11-10
- 发明人: Suk-Kang Sung , Kyu-Charn Park , Choong-Ho Lee
- 申请人: Suk-Kang Sung , Kyu-Charn Park , Choong-Ho Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2007-0047383 20070516
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238
摘要:
A method of manufacturing a non-volatile memory device includes sequentially depositing a first insulation layer, a charge storage layer, and a second insulation layer on a substrate, forming a first opening through the resultant structure to expose the substrate, forming second and third openings through the second insulation layer to form a second insulation layer pattern, forming a conductive layer on the second insulation layer pattern, forming a photoresist pattern structure on the conductive layer, and forming simultaneously a common source line, at least one ground selection line, at least one string selection line, and a plurality of gate structures on the substrate by etching through the photoresist pattern structure, wherein the common source line and the gate structures are formed simultaneously on a substantially same level and of substantially same components.