发明授权
US07615454B2 Embedded stressed nitride liners for CMOS performance improvement
有权
嵌入式应力氮化物衬垫可提高CMOS性能
- 专利标题： Embedded stressed nitride liners for CMOS performance improvement
- 专利标题（中）： 嵌入式应力氮化物衬垫可提高CMOS性能
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申请号： US11876415申请日： 2007-10-22
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公开(公告)号： US07615454B2公开(公告)日： 2009-11-10
- 发明人: Dureseti Chidambarrao , Omer H. Dokumaci
- 申请人： Dureseti Chidambarrao , Omer H. Dokumaci
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
The present invention provides a semiconducting device including a gate region positioned on a mesa portion of a substrate; and a nitride liner positioned on the gate region and recessed surfaces of the substrate adjacent to the gate region, the nitride liner providing a stress to a device channel underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 275 MPa to about 450 Mpa.