发明授权
- 专利标题： Method for depositing film and method for manufacturing semiconductor device
- 专利标题（中）： 薄膜沉积方法及制造半导体器件的方法
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申请号： US11715847申请日： 2007-03-09
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公开(公告)号： US07615500B2公开(公告)日： 2009-11-10
- 发明人: Kensuke Takano , Ichiro Yamamoto , Koji Watanabe
- 申请人： Kensuke Takano , Ichiro Yamamoto , Koji Watanabe
- 申请人地址： JP Kawasaki, Kanagawa JP Tokyo
- 专利权人： NEC Electronics Corporation,NEC Corporation
- 当前专利权人： NEC Electronics Corporation,NEC Corporation
- 当前专利权人地址： JP Kawasaki, Kanagawa JP Tokyo
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2006-066945 20060313
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process including forming a high dielectric constant film on a second wafer; and achieving nitridation of the high dielectric constant film formed on the second wafer. The processing the wafer and the performing the coating process are carried out in the same reaction chamber. The coating process is carried out before the processing the wafer.
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