发明授权
- 专利标题: Semiconductor memory device having RAM and ROM areas
- 专利标题(中): 具有RAM和ROM区域的半导体存储器件
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申请号: US11567844申请日: 2006-12-07
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公开(公告)号: US07617351B2公开(公告)日: 2009-11-10
- 发明人: Byung-Jun Min , Kang-Woon Lee , Han-Joo Lee , Byung-Gil Jeon
- 申请人: Byung-Jun Min , Kang-Woon Lee , Han-Joo Lee , Byung-Gil Jeon
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 代理机构: F. Chau & Assoc., LLC
- 优先权: KR10-2006-0002111 20060109
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A semiconductor memory having two different memory areas in one chip includes a memory cell array including a first variable memory area controlled to be accessible in at least first and second operation modes, and a second variable memory area controlled to be inaccessible in one of the first and second operation modes; and a memory control unit for storing area information discriminating between the first memory area and the second memory area and generating memory control signals for controlling access to the first memory area and the second memory area. One memory can be substituted for a memory combination including ROMs and RAMs in one chip.
公开/授权文献
- US20080016306A1 SEMICONDUCTOR MEMORY DEVICE HAVING RAM AND ROM AREAS 公开/授权日:2008-01-17
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