发明授权
- 专利标题： Methods of forming nanocrystals
- 专利标题（中）： 形成纳米晶体的方法
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申请号： US11200458申请日： 2005-08-09
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公开(公告)号： US07618492B2公开(公告)日： 2009-11-17
- 发明人: Laura Pescini , Achim Gratz , Veronika Polei
- 申请人： Laura Pescini , Achim Gratz , Veronika Polei
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： C30B21/02
- IPC分类号： C30B21/02
摘要：
Methods of selectively forming nanocrystals on semiconductor devices are disclosed. Regions of a workpiece are masked with a masking material, and the nanocrystals are formed on the unmasked regions. The nanocrystals may be formed by exposing the masked workpiece to a first substance, and exposing the workpiece to at least one second substance either before or after the masking material is removed.
公开/授权文献
- US20070034142A1 Methods of forming nanocrystals 公开/授权日：2007-02-15
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