发明授权
US07618837B2 Method for fabricating high aspect ratio MEMS device with integrated circuit on the same substrate using post-CMOS process
失效
使用后CMOS工艺在同一衬底上制造具有集成电路的高纵横比MEMS器件的方法
- 专利标题： Method for fabricating high aspect ratio MEMS device with integrated circuit on the same substrate using post-CMOS process
- 专利标题（中）： 使用后CMOS工艺在同一衬底上制造具有集成电路的高纵横比MEMS器件的方法
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申请号： US11111344申请日： 2005-04-22
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公开(公告)号： US07618837B2公开(公告)日： 2009-11-17
- 发明人: Guizhen Yan , Yong Zhu , Jie Fan , Xuesong Liu , Jian Zhou , Yangyuan Wang
- 申请人： Guizhen Yan , Yong Zhu , Jie Fan , Xuesong Liu , Jian Zhou , Yangyuan Wang
- 申请人地址： CN Beijing
- 专利权人： Peking University
- 当前专利权人： Peking University
- 当前专利权人地址： CN Beijing
- 代理机构： Austin Rapp & Hardman
- 优先权： CN200410049792 20040629
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The invention discloses a novel flexible, modular fabrication method for integrated high aspect ratio single crystal silicon microstructures designed and manufactured in a post conventional CMOS process (Post-CMOS). The method involves the standard circuits formation, the electrical isolation trenched etching and refilling, backside etching, interconnection formation, and structure releasing. Further, a method of tailoring the trench profile for refill the trench fully without void is also disclosed.
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