发明授权
- 专利标题: High resistance ionic current source
- 专利标题(中): 高电阻离子电流源
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申请号: US11040359申请日: 2005-01-20
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公开(公告)号: US07622024B1公开(公告)日: 2009-11-24
- 发明人: Steven T. Mayer , Jonathan D. Reid
- 申请人: Steven T. Mayer , Jonathan D. Reid
- 申请人地址: US CA San Jose
- 专利权人: Novellus Systems, Inc.
- 当前专利权人: Novellus Systems, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Weaver Austin Villeneuve & Sampson LLP
- 主分类号: C25D17/00
- IPC分类号: C25D17/00 ; C25D5/00
摘要:
A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.