发明授权
- 专利标题： Fused nanocrystal thin film semiconductor and method
- 专利标题（中）： 熔融纳米晶体薄膜半导体及方法
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申请号： US11548230申请日： 2006-10-10
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公开(公告)号： US07622371B2公开(公告)日： 2009-11-24
- 发明人: Alfred Pan , Hou T. Ng
- 申请人： Alfred Pan , Hou T. Ng
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
A thin film semiconductor and a method of its fabrication use induced crystallization and aggregation of a nanocrystal seed layer to form a merged-domain layer. The nanocrystal seed layer is deposited onto a substrate surface within a defined boundary. A reaction temperature below a boiling point of a reaction solution is employed. A thin film metal-oxide transistor and a method of its production employ the thin film semiconductor as a channel of the transistor. The merged-domain layer exhibits high carrier mobility.
公开/授权文献
- US20080083950A1 FUSED NANOCRYSTAL THIN FILM SEMICONDUCTOR AND METHOD 公开/授权日：2008-04-10
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