Invention Grant
- Patent Title: InN/TiO2 photosensitized electrode
- Patent Title (中): InN / TiO2光敏电极
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Application No.: US11494597Application Date: 2006-07-28
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Publication No.: US07622397B2Publication Date: 2009-11-24
- Inventor: Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Yuan-Pern Lee , Wei-Guang Diau , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- Applicant: Ming-Chang Lin , Yen-Chang Tzeng , Shan-Ming Lan , Yuan-Pern Lee , Wei-Guang Diau , Tsong-Yang Wei , Jyh-Perng Chiu , Li-Fu Lin , Der-Jhy Shieh , Ming-Chao Kuo
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council - Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council - Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan
- Priority: TW95107066A 20060302
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
Public/Granted literature
- US20070207561A1 InN/TiO2 photosensitized electrode Public/Granted day:2007-09-06
Information query
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