- 专利标题: Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement
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申请号: US11859889申请日: 2007-09-24
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公开(公告)号: US07629233B2公开(公告)日: 2009-12-08
- 发明人: Kerry Bernstein , Jeffery Sleight , Min Yang
- 申请人: Kerry Bernstein , Jeffery Sleight , Min Yang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Vazken Alexanian
- 主分类号: H01L29/72
- IPC分类号: H01L29/72
摘要:
The present invention provides a semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an isolation region separating the SOI region from the bulk-Si region; and at least one first device located in the SOI region and at least one second device located in the bulk-Si region. The SOI region has an silicon layer atop an insulating layer. The bulk-Si region further comprises a well region underlying the second device and a contact to the well region, wherein the contact stabilizes floating body effects. The well contact is also used to control the threshold voltages of the FETs in the bulk-Si region to optimized the power and performance of circuits built from the combination of the SOI and bulk-Si region FETs.