发明授权
- 专利标题： Multiple-time flash anneal process
- 专利标题（中）： 多次闪光退火工艺
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申请号： US11698239申请日： 2007-01-25
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公开(公告)号： US07629275B2公开(公告)日： 2009-12-08
- 发明人: Jennifer Chen , Chi-Chun Chen , Hun-Jan Tao
- 申请人： Jennifer Chen , Chi-Chun Chen , Hun-Jan Tao
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of forming an integrated circuit is provided. The method includes performing a multiple-time flash anneal process to a wafer, wherein the multiple-time flash anneal process comprises preheating the wafer to a first preheat temperature; performing a first flash on the wafer with a first flash energy; preheating the wafer to a second preheat temperature; and performing a second flash on the wafer with a second flash energy.
公开/授权文献
- US20080182430A1 Multiple-time flash anneal process 公开/授权日：2008-07-31
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