发明授权
US07629667B2 Semiconductor device including an on-chip coil antenna formed on a device layer which is formed on an oxide film layer
失效
半导体装置包括形成在形成于氧化物膜层上的器件层上的片上线圈天线
- 专利标题: Semiconductor device including an on-chip coil antenna formed on a device layer which is formed on an oxide film layer
- 专利标题(中): 半导体装置包括形成在形成于氧化物膜层上的器件层上的片上线圈天线
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申请号: US10564885申请日: 2003-08-28
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公开(公告)号: US07629667B2公开(公告)日: 2009-12-08
- 发明人: Mitsuo Usami
- 申请人: Mitsuo Usami
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 国际申请: PCT/JP03/10935 WO 20030828
- 国际公布: WO2005/024949 WO 20050317
- 主分类号: H01L21/8222
- IPC分类号: H01L21/8222
摘要:
An issue of reducing a product manufacture unit cost exists in wireless IC chips which are required to be disposable because the wireless IC chips circulate in a massive scale and require a very high collection cost. It is possible to increase the communication distance of a wireless IC chip with an on-chip antenna simply contrived for reduction of the production unit cost by increasing the size of the antenna mounted on a wireless IC chip or by increasing the output power of a reader as in a conventional way. However, because of the circumstances of the applications used and the read accuracy of the reader, the antenna cannot be mounted on a very small chip in an in-chip antenna form. When an AC magnetic field is applied to an on-chip antenna from outside, eddy current is produced in principle because the semiconductor substrate is conductive. It has been fount that the thickness of the substrate can be used as a design parameter because of the eddy current. Based on this finding, according to the invention, the thickness of the substrate is decreased to reduce or eliminate the energy loss due to the eddy current to utilize the electromagnetic wave energy for the semiconductor circuit operation as originally designed. With the thickness reduction, it is possible to increase the communication distance by preventing ineffective absorption of energy and thereby increasing the current flowing through the on-chip antenna.
公开/授权文献
- US20060260546A1 Semiconductor device and its manufacturing method 公开/授权日:2006-11-23
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