发明授权
US07629667B2 Semiconductor device including an on-chip coil antenna formed on a device layer which is formed on an oxide film layer 失效
半导体装置包括形成在形成于氧化物膜层上的器件层上的片上线圈天线

  • 专利标题: Semiconductor device including an on-chip coil antenna formed on a device layer which is formed on an oxide film layer
  • 专利标题(中): 半导体装置包括形成在形成于氧化物膜层上的器件层上的片上线圈天线
  • 申请号: US10564885
    申请日: 2003-08-28
  • 公开(公告)号: US07629667B2
    公开(公告)日: 2009-12-08
  • 发明人: Mitsuo Usami
  • 申请人: Mitsuo Usami
  • 申请人地址: JP Tokyo
  • 专利权人: Hitachi, Ltd.
  • 当前专利权人: Hitachi, Ltd.
  • 当前专利权人地址: JP Tokyo
  • 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
  • 国际申请: PCT/JP03/10935 WO 20030828
  • 国际公布: WO2005/024949 WO 20050317
  • 主分类号: H01L21/8222
  • IPC分类号: H01L21/8222
Semiconductor device including an on-chip coil antenna formed on a device layer which is formed on an oxide film layer
摘要:
An issue of reducing a product manufacture unit cost exists in wireless IC chips which are required to be disposable because the wireless IC chips circulate in a massive scale and require a very high collection cost. It is possible to increase the communication distance of a wireless IC chip with an on-chip antenna simply contrived for reduction of the production unit cost by increasing the size of the antenna mounted on a wireless IC chip or by increasing the output power of a reader as in a conventional way. However, because of the circumstances of the applications used and the read accuracy of the reader, the antenna cannot be mounted on a very small chip in an in-chip antenna form. When an AC magnetic field is applied to an on-chip antenna from outside, eddy current is produced in principle because the semiconductor substrate is conductive. It has been fount that the thickness of the substrate can be used as a design parameter because of the eddy current. Based on this finding, according to the invention, the thickness of the substrate is decreased to reduce or eliminate the energy loss due to the eddy current to utilize the electromagnetic wave energy for the semiconductor circuit operation as originally designed. With the thickness reduction, it is possible to increase the communication distance by preventing ineffective absorption of energy and thereby increasing the current flowing through the on-chip antenna.
公开/授权文献
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理;集成电路器件或其特殊部件的制造(由预制电组件组成的组装件的制造入H05K3/00,H05K13/00)
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理(电可编程只读存储器或其多步骤的制造方法入H01L27/115)
H01L21/78 ...把衬底连续地分成多个独立的器件(改变表面物理特性或者半导体形状的切割入H01L21/304)
H01L21/82 ....制造器件,例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的(H01L21/8258优先)
H01L21/8222 ......双极工艺
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