发明授权
- 专利标题： Semiconductor device having a resin protrusion with a depression and method manufacturing the same
- 专利标题（中）： 具有凹陷的树脂突起的半导体器件及其制造方法
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申请号： US11481332申请日： 2006-07-05
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公开(公告)号： US07629671B2公开(公告)日： 2009-12-08
- 发明人: Shuichi Tanaka
- 申请人： Shuichi Tanaka
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2005-197929 20050706
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/00
摘要：
A semiconductor device including a semiconductor substrate having a plurality of electrodes, a resin protrusion formed on the semiconductor substrate, and an interconnect electrically connected to the electrodes and formed to extend over the resin protrusion. A depression is formed in a top surface of the resin protrusion. The interconnect has a cut portion disposed over at least part of the depression.
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