Invention Grant
US07630263B2 Exploiting a statistical distribution of the values of an electrical characteristic in a population of auxiliary memory cells for obtaining reference cells 有权
利用用于获取参考单元的辅助存储器单元群中的电特性的值的统计分布

  • Patent Title: Exploiting a statistical distribution of the values of an electrical characteristic in a population of auxiliary memory cells for obtaining reference cells
  • Patent Title (中): 利用用于获取参考单元的辅助存储器单元群中的电特性的值的统计分布
  • Application No.: US11318053
    Application Date: 2005-12-23
  • Publication No.: US07630263B2
    Publication Date: 2009-12-08
  • Inventor: Federico Pio
  • Applicant: Federico Pio
  • Agency: Blakely, Sokoloff, Taylor & Zafman LLP
  • Priority: ITMI2004A2462 20041223
  • Main IPC: G11C7/02
  • IPC: G11C7/02
Exploiting a statistical distribution of the values of an electrical characteristic in a population of auxiliary memory cells for obtaining reference cells
Abstract:
In a semiconductor memory device, a method for obtaining at least one reference cell adapted to be exploited as a generator of a reference signal, the reference signal depending on a value of an electrical characteristic of the at least one reference cell. The method includes providing a population of auxiliary cells, operating on said population of auxiliary cells for varying a value of the electrical characteristic thereof, in such a way that the varied values are statistically distributed in a range including a value of the electrical characteristic corresponding to the reference signal, and choosing the at least one reference cell, wherein choosing includes choosing at least one auxiliary cell in the population of auxiliary cells having the value of the electrical characteristic close to the value corresponding to the reference signal with a pre-defined tolerance.
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