发明授权
- 专利标题: Carbon nanotube-based electronic devices made by electrolytic deposition and applications thereof
- 专利标题(中): 通过电沉积制造的基于碳纳米管的电子器件及其应用
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申请号: US11638571申请日: 2006-12-14
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公开(公告)号: US07632762B2公开(公告)日: 2009-12-15
- 发明人: Thomas Tiano , John Gannon , Charles Carey , Brian Farrell , Richard Czerw
- 申请人: Thomas Tiano , John Gannon , Charles Carey , Brian Farrell , Richard Czerw
- 申请人地址: US MA Waltham
- 专利权人: Foster Miller, Inc.
- 当前专利权人: Foster Miller, Inc.
- 当前专利权人地址: US MA Waltham
- 代理机构: Dickstein Shapiro LLP
- 主分类号: H01L51/30
- IPC分类号: H01L51/30
摘要:
Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope. The plurality of metallic single-wall carbon nanotubes are removed (e.g., by application of bias voltage) in an amount sufficient to form the semiconducting device. The devices of the invention include, but not limited to, chemical or biological sensors, carbon nanotube field-effect transistors (CNFETs), tunnel junctions, Schottky junctions, and multi-dimensional nanotube arrays.