Invention Grant
- Patent Title: Silicon-controlled rectifier for electrostatic discharge protection circuits and structure thereof
- Patent Title (中): 用于静电放电保护电路的可控硅整流器及其结构
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Application No.: US11461681Application Date: 2006-08-01
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Publication No.: US07633096B2Publication Date: 2009-12-15
- Inventor: Ki-Whan Song , Yeong-Taek Lee
- Applicant: Ki-Whan Song , Yeong-Taek Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2005-0073053 20050810
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
A Silicon-Controlled Rectifier (SCR) for Electrostatic Discharge (ESD) protection includes an isolation device. The isolation device isolates a main ground voltage line, connected to a first cathode, from a peripheral ground voltage line, connected to a second cathode. As result, even when noise occurs in the peripheral ground voltage line during the operation of an integrated circuit, the main ground voltage line maintains a stable voltage level.
Public/Granted literature
- US20070034896A1 SILICON-CONTROLLED RECTIFIER FOR ELECTROSTATIC DISCHARGE PROTECTION CIRCUITS AND STRUCTURE THEREOF Public/Granted day:2007-02-15
Information query
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