发明授权
- 专利标题: Lead contact structure for EMR elements
- 专利标题(中): EMR元件的引线接触结构
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申请号: US11168070申请日: 2005-06-27
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公开(公告)号: US07633718B2公开(公告)日: 2009-12-15
- 发明人: Robert E. Fontana, Jr. , Stefan Maat
- 申请人: Robert E. Fontana, Jr. , Stefan Maat
- 申请人地址: NL Amsterdam
- 专利权人: Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人: Hitachi Global Storage Technologies Netherlands, B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Duft Bornsen & Fishman, LLP
- 主分类号: G11B5/48
- IPC分类号: G11B5/48 ; G11B21/16 ; G11B5/33 ; G11B5/127
摘要:
EMR elements and methods of fabricating the EMR elements are disclosed. The EMR structure includes one or more layers that form an active region, such as a two-dimensional electron gas (2DEG). The EMR structure has a first side surface, having a plurality of lead protrusions that extend outwardly from the main body of the EMR structure, and an opposing second side surface. The lead protrusions are used to form the current and voltage leads for the EMR element. The active region extends through each lead protrusion and is accessible along a perimeter of each of the lead protrusions. Conductive material is formed along the perimeter of each lead protrusion and contacts the active region of the EMR structure along the perimeter. The lead protrusion and the corresponding conductive material contacting the active region of each lead protrusion form leads for the EMR element, such as current leads and voltage leads.
公开/授权文献
- US20060289984A1 Lead contact structure for EMR elements 公开/授权日:2006-12-28