Invention Grant
- Patent Title: Manufacturing processing for an isolated transistor with strained channel
- Patent Title (中): 具有应变通道的隔离晶体管的制造处理
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Application No.: US11454398Application Date: 2006-06-16
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Publication No.: US07635615B2Publication Date: 2009-12-22
- Inventor: Jean-Charles Barbe , Sylvian Barraud , Claire Fenouillet-Beranger , Claire Gallon , Aomar Halimaoui
- Applicant: Jean-Charles Barbe , Sylvian Barraud , Claire Fenouillet-Beranger , Claire Gallon , Aomar Halimaoui
- Applicant Address: FR Paris
- Assignee: Commissariat A l'Energie Atomique
- Current Assignee: Commissariat A l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Nixon Peabody LLP
- Priority: FR0551664 20050617
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Transistor type semiconducting device comprising: a substrate, an insulating layer comprising sidewalls formed on each part of the source zone and the drain zone, drain, channel and source zones, the channel zone being formed on the insulating layer and being strained by the drain and the source zones, between the side parts, a grid, separated from the channel by a grid insulator.
Public/Granted literature
- US20070001227A1 Manufacturing processing for an isolated transistor with strained channel Public/Granted day:2007-01-04
Information query
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