Invention Grant
- Patent Title: Semiconductor layer, process for forming the same, and semiconductor light emitting device
- Patent Title (中): 半导体层，其形成工艺和半导体发光器件
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Application No.: US11730472Application Date: 2007-04-02
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Publication No.: US07635872B2Publication Date: 2009-12-22
- Inventor: Hideki Asano
- Applicant: Hideki Asano
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-096944 20060331; JP2007-042238 20070222
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BxAlyGazN, wherein x represents a number satisfying the condition 0
Public/Granted literature
- US20070228408A1 Semiconductor layer, process for forming the same, and semiconductor light emitting device Public/Granted day:2007-10-04
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