Manufacturing method of semiconductor-on-insulator region structures

Invention Grant

US07638844B2 Manufacturing method of semiconductor-on-insulator region structures 有权

Title translation: 绝缘体上半导体区域结构的制造方法

Patent Title: Manufacturing method of semiconductor-on-insulator region structures
Patent Title (中): 绝缘体上半导体区域结构的制造方法
Application No.: US11713553

Application Date: 2007-03-02
Publication No.: US07638844B2

Publication Date: 2009-12-29
Inventor: Stéphane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillett-Beranger
Applicant: Stéphane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillett-Beranger
Applicant Address: FR Mountouge FR Paris
Assignee: STMicroelectronics S.A.,Commissariat à l'énergie atomique
Current Assignee: STMicroelectronics S.A.,Commissariat à l'énergie atomique
Current Assignee Address: FR Mountouge FR Paris
Agency: Wolf, Greenfield & Sacks, P.C.
Agent Lisa K. Jorgenson; James H. Morris
Main IPC: H01L23/62
IPC: H01L23/62 ; H01L21/00

Abstract:

A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.

Abstract(Chinese):

硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。

Public/Granted literature

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/58	.其他组不包含的，用于半导体器件的电结构装置
H01L23/62	..防过电流或过电负荷保护装置，例如熔丝、分路器