发明授权
- 专利标题： Solid state imaging device, method for fabricating the same, and camera
- 专利标题（中）： 固态成像装置及其制造方法及相机
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申请号： US11826570申请日： 2007-07-17
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公开(公告)号： US07638853B2公开(公告)日： 2009-12-29
- 发明人: Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
- 申请人： Mitsuyoshi Mori , Takumi Yamaguchi , Toru Okino
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2006-209486 20060801
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113 ; H01L27/146 ; H01L21/00 ; H01L21/336 ; H01L21/76 ; H01L21/762
摘要：
A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.
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