发明授权
US07639457B1 Magnetic sensor with underlayers promoting high-coercivity, in-plane bias layers
失效
磁性传感器具有底层，促进高矫顽力，面内偏置层
- 专利标题： Magnetic sensor with underlayers promoting high-coercivity, in-plane bias layers
- 专利标题（中）： 磁性传感器具有底层，促进高矫顽力，面内偏置层
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申请号： US10788765申请日： 2004-02-27
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公开(公告)号： US07639457B1公开(公告)日： 2009-12-29
- 发明人: Yingjian Chen , Wei Zhang , Jinqiu Zhang , Haifeng Wang , Satoru Araki , Mohamad T. Krounbi
- 申请人： Yingjian Chen , Wei Zhang , Jinqiu Zhang , Haifeng Wang , Satoru Araki , Mohamad T. Krounbi
- 申请人地址： US CA Fremont
- 专利权人： Western Digital (Fremont), LLC
- 当前专利权人： Western Digital (Fremont), LLC
- 当前专利权人地址： US CA Fremont
- 代理机构： Virtual Law Partners LLP
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G11B5/127
摘要：
A magnetic sensor is disclosed comprising an antiferromagnetic layer; a first ferromagnetic layer disposed over the antiferromagnetic layer, the first ferromagnetic layer having a magnetization that is pinned by the antiferromagnetic layer; a second ferromagnetic layer disposed over the first ferromagnetic layer, the second ferromagnetic layer having a magnetization that rotates due to an applied magnetic field; a third ferromagnetic layer disposed adjacent to an end of the second ferromagnetic layer, the third ferromagnetic layer having a primarily in-plane magnetization providing a magnetic field to stabilize the end of the second ferromagnetic layer; an amorphous, metallic, nonmagnetic underlayer disposed adjacent to the antiferromagnetic layer; and a crystalline seed layer disposed between the underlayer and the third ferromagnetic layer, the seed layer having a crystalline structure that promotes the in-plane magnetization of the third ferromagnetic layer.
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