Invention Grant
US07642180B2 Semiconductor on insulator vertical transistor fabrication and doping process
有权
半导体绝缘体垂直晶体管的制造和掺杂过程
- Patent Title: Semiconductor on insulator vertical transistor fabrication and doping process
- Patent Title (中): 半导体绝缘体垂直晶体管的制造和掺杂过程
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Application No.: US11901969Application Date: 2007-09-18
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Publication No.: US07642180B2Publication Date: 2010-01-05
- Inventor: Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
- Applicant: Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Law Office of Robert M. Wallace
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
Public/Granted literature
- US20080044960A1 Semiconductor on insulator vertical transistor fabrication and doping process Public/Granted day:2008-02-21
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