Invention Grant
US07642180B2 Semiconductor on insulator vertical transistor fabrication and doping process 有权
半导体绝缘体垂直晶体管的制造和掺杂过程

Semiconductor on insulator vertical transistor fabrication and doping process
Abstract:
A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
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