发明授权
- 专利标题： Semiconductor device with a noise prevention structure
- 专利标题（中）： 具有防噪声结构的半导体器件
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申请号： US12275112申请日： 2008-11-20
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公开(公告)号： US07642615B2公开(公告)日： 2010-01-05
- 发明人: Sheng-Yow Chen , Dichi Tsai
- 申请人： Sheng-Yow Chen , Dichi Tsai
- 申请人地址： TW Hsinchu
- 专利权人： Airoha Technology Corp.
- 当前专利权人： Airoha Technology Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, PLLC
- 优先权： TW93125487A 20040826
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device including a substrate of a first semiconductor type with a pad region and a noise prevention structure in the substrate, on least one side of the pad region. The device further includes the substrate structure, a pad, and a dielectric layer therebetween.
公开/授权文献
- US20090102011A1 SEMICONDUCTOR DEVICE WITH A NOISE PREVENTION STRUCTURE 公开/授权日：2009-04-23
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