发明授权
- 专利标题: Silicon-containing layer deposition with silicon compounds
- 专利标题(中): 含硅层沉积与硅化合物
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申请号: US11549033申请日: 2006-10-12
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公开(公告)号: US07645339B2公开(公告)日: 2010-01-12
- 发明人: Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
- 申请人: Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Townsend and Townsend and Crew, LLP
- 主分类号: C30B21/04
- IPC分类号: C30B21/04
摘要:
Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.