Invention Grant
US07645559B2 Positive resist composition and method of forming resist pattern
有权
正型抗蚀剂组合物和形成抗蚀剂图案的方法
- Patent Title: Positive resist composition and method of forming resist pattern
- Patent Title (中): 正型抗蚀剂组合物和形成抗蚀剂图案的方法
-
Application No.: US12064288Application Date: 2006-08-16
-
Publication No.: US07645559B2Publication Date: 2010-01-12
- Inventor: Ryoji Watanabe , Masaru Takeshita
- Applicant: Ryoji Watanabe , Masaru Takeshita
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2005-241014 20050823
- International Application: PCT/JP2006/316083 WO 20060816
- International Announcement: WO2007/039989 WO 20070412
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/30

Abstract:
A positive resist composition and method of forming a resist pattern are provided which enable formation of a resist pattern having excellent shape with reduced LWR.The positive resist composition includes a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon irradiation, the resin component (A) having a structural unit (a1) which has an acetal-type protection group, and the acid-generator component (B) including an acid generator (B1) having a cation moiety represented by general formula (b-5) shown below: wherein Ra and Rb each independently represents an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group; Rc represents an aryl group or alkyl group which may or may not have a substituent; and n′ and n″ each independently represents an integer of 0 to 3.
Public/Granted literature
- US20090246683A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN Public/Granted day:2009-10-01
Information query
IPC分类: